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| APT30DF100HJ ISOTOP(R)Fast Diode Full Bridge Power Module VRRM = 1000V IC = 30A @ Tc = 80C Application * * * * Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features * * * * * * * * Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP(R) Package (SOT-227) + ~ - Benefits * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant ~ Absolute maximum ratings Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% 8.3ms TC = 25C TC = 80C TJ = 45C Max ratings 1000 45 30 210 A Unit V APT30DF100HJ - Rev 0 November, 2009 Non-Repetitive Forward Surge Current These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APT30DF100HJ All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM CT Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Test Conditions IF = 40A IF = 80A Tj = 125C IF = 40A Tj = 25C VR = 1000V Tj = 125C VR = 200V Min Typ 2.5 3.1 2 Max 3 Unit V 100 500 28 A pF Dynamic Characteristics Symbol Characteristic trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current IF = 40A VR = 667V di/dt=1000A/s IF = 40A VR = 667V di/dt = 200A/s Test Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C Min Typ 250 315 415 1650 4 9 150 2660 29 ns nC A Max Unit ns nC A Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min Typ Max 1.2 20 175 300 1.5 Unit C/W V C N.m g Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 29.2 www.microsemi.com 2-4 APT30DF100HJ - Rev 0 November, 2009 APT30DF100HJ Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 80 trr, Reverse Recovery Time (ns) IF, Forward Current (A) Trr vs. Current Rate of Charge 400 350 300 250 200 150 100 0 200 400 600 800 1000 1200 -diF/dt (A/s) IRRM vs. Current Rate of Charge IRRM, Reverse Recovery Current (A) 80 A 40 A 20 A TJ=125C VR=667V 60 TJ=125C 40 20 TJ=25C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge 4 TJ=125C VR=667V 80 A QRR, Reverse Recovery Charge (C) 40 TJ=125C VR=667V 3 40 A 30 80 A 40 A 2 20 A 20 20 A 1 10 0 0 200 400 600 800 1000 1200 -diF/dt (A/s) 0 0 200 400 600 800 1000 1200 -diF/dt (A/s) Capacitance vs. Reverse Voltage 175 C, Capacitance (pF) 150 125 100 75 50 25 0 1 10 100 1000 VR, Reverse Voltage (V) www.microsemi.com 3-4 APT30DF100HJ - Rev 0 November, 2009 APT30DF100HJ SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) Dimensions in Millimeters and (Inches) ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APT30DF100HJ - Rev 0 November, 2009 |
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